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dc.contributor.authorMa, Ming-Wenen_US
dc.contributor.authorChiang, Tsung-Yuen_US
dc.contributor.authorYeh, Chi-Rueien_US
dc.contributor.authorChao, Tien-Shengen_US
dc.contributor.authorLei, Tan-Fuen_US
dc.date.accessioned2014-12-08T15:10:28Z-
dc.date.available2014-12-08T15:10:28Z-
dc.date.issued2009en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://hdl.handle.net/11536/8003-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3177277en_US
dc.description.abstractIn this article, high performance p-channel, low temperature polysilicon thin-film transistors (LTPS-TFTs) are fabricated by using HfO(2) gate dielectric and two crystallization methods, solid phase crystallization (SPC) and metal-induced lateral crystallization (MILC) are compared. High field-effect mobility mu(FE) 114 and 215 cm(2)/V s), ultralow subthreshold swing (SS similar to 145 and 107 mV/decade), and low threshold voltage (V(th) similar to -1.05 and -0.75 V) are derived from SPC- and MILC-TFTs with HfO(2) gate dielectric, respectively. These excellent electrical characteristics are due to low trap states and much higher gate capacitance density with equivalent oxide thickness similar to 12.3 nm, resulting in lower operation voltage within 2 V of LTPS-TFT without any passivation method. The comparison of SPC and MILC p-channel LTPS-TFTs with HfO(2) gate dielectric is demonstrated. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3177277] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleElectrical Characteristics of High Performance SPC and MILC p-Channel LTPS-TFT with High-kappa Gate Dielectricen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3177277en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume12en_US
dc.citation.issue10en_US
dc.citation.spageH361en_US
dc.citation.epageH364en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000268962800014-
dc.citation.woscount5-
Appears in Collections:Articles