A flexible organic pentacene nonvolatile memory based on high-kappa dielectric layers

doi:10.1063/1.3046115

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang, Ming-Feng	en_US
dc.contributor.author	Lee, Po-Tsung	en_US
dc.contributor.author	McAlister, S. P.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.date.accessioned	2014-12-08T15:10:31Z	-
dc.date.available	2014-12-08T15:10:31Z	-
dc.date.issued	2008-12-08	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.3046115	en_US
dc.identifier.uri	http://hdl.handle.net/11536/8040	-
dc.description.abstract	We report a pentacene thin film transistor nonvolatile memory fabricated on a flexible polyimide substrate. This device shows a low program/erase voltage of 12 V, a speed of 1/100 ms, an initial memory window of 2.4 V, and a 0.78 V memory window after 48 h. This has been achieved by using a high-kappa dielectric as charge trapping, blocking, and tunneling gate insulator layers.	en_US
dc.language.iso	en_US	en_US
dc.subject	flexible electronics	en_US
dc.subject	high-k dielectric thin films	en_US
dc.subject	organic semiconductors	en_US
dc.subject	random-access storage	en_US
dc.subject	semiconductor thin films	en_US
dc.subject	thin film transistors	en_US
dc.title	A flexible organic pentacene nonvolatile memory based on high-kappa dielectric layers	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.3046115	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	93	en_US
dc.citation.issue	23	en_US
dc.citation.epage		en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000261699700072	-
dc.citation.woscount	23	-
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