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dc.contributor.authorLuo, C. W.en_US
dc.contributor.authorLee, C. C.en_US
dc.contributor.authorLi, C. H.en_US
dc.contributor.authorShih, H. C.en_US
dc.contributor.authorChen, Y. -J.en_US
dc.contributor.authorHsieh, C. C.en_US
dc.contributor.authorSu, C. H.en_US
dc.contributor.authorTzeng, W. Y.en_US
dc.contributor.authorWu, K. H.en_US
dc.contributor.authorJuang, J. Y.en_US
dc.contributor.authorUen, T. M.en_US
dc.contributor.authorChen, S. P.en_US
dc.contributor.authorLin, J. -Y.en_US
dc.contributor.authorKobayashi, T.en_US
dc.date.accessioned2014-12-08T15:10:32Z-
dc.date.available2014-12-08T15:10:32Z-
dc.date.issued2008-12-08en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.16.020610en_US
dc.identifier.urihttp://hdl.handle.net/11536/8041-
dc.description.abstractWe report on the formation of organized sub-micron YBa(2)Cu(3)O(7) (YBCO) dots induced by irradiating femtosecond laser pulses on YBCO films prepared by pulse laser deposition with fluence in the range of 0.21 similar to 0.53 J/cm(2). The morphology of the YBCO film surface depends strongly on the laser fluences irradiated. At lower laser fluence (similar to 0.21 J/cm(2)) the morphology was pattern of periodic ripples with sub-micrometer spacing. Slightly increasing the laser fluence to 0.26 J/cm(2) changes the pattern into organized sub-micron dots with diameters ranging from 100 nm to 800 nm and height of 150 nm. Further increase of the laser fluence to over 0.32 J/cm(2), however, appeared to result in massive melting and led to irregular morphology. The mechanism and the implications of the current findings will be discussed. Arrays of YBCO sub-micron dots with T(c) = 89.7 K were obtained. (C) 2008 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleOrdered YBCO sub-micron array structures induced by pulsed femtosecond laser irradiationen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.16.020610en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume16en_US
dc.citation.issue25en_US
dc.citation.spage20610en_US
dc.citation.epage20616en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000261563100047-
dc.citation.woscount8-
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