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dc.contributor.authorMa, Chun-Lanen_US
dc.contributor.authorNghiem, Diuen_US
dc.contributor.authorChen, Yu-Changen_US
dc.date.accessioned2014-12-08T15:10:32Z-
dc.date.available2014-12-08T15:10:32Z-
dc.date.issued2008-12-01en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3043438en_US
dc.identifier.urihttp://hdl.handle.net/11536/8054-
dc.description.abstractWe have investigated the transport properties of alkanethiol molecules in the two-terminal and three-terminal junctions by using first-principles approaches. We observe that states around the Fermi levels are introduced in the amino-substituted butanethiol junction. It leads to a sharp increase in the current, which is credited to the resonant tunneling. The current-voltage characteristics suggest that the amino-substituted butanethiol molecular junction may be a promising candidate for field-effect transistors.en_US
dc.language.isoen_USen_US
dc.subjectab initio calculationsen_US
dc.subjectFermi levelen_US
dc.subjectfield effect transistorsen_US
dc.subjectorganic semiconductorsen_US
dc.subjectresonant tunnellingen_US
dc.titleAlkanethiol-based single-molecule transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3043438en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume93en_US
dc.citation.issue22en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000261430600043-
dc.citation.woscount8-
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