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dc.contributor.authorTang, S. -J.en_US
dc.contributor.authorChang, Wen-Kaien_US
dc.contributor.authorChiu, Yu-Meien_US
dc.contributor.authorChen, Hsin-Yien_US
dc.contributor.authorCheng, Cheng-Mawen_US
dc.contributor.authorTsuei, Ku-Dingen_US
dc.contributor.authorMiller, T.en_US
dc.contributor.authorChiang, T. -C.en_US
dc.date.accessioned2019-04-03T06:42:44Z-
dc.date.available2019-04-03T06:42:44Z-
dc.date.issued2008-12-01en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.78.245407en_US
dc.identifier.urihttp://hdl.handle.net/11536/8061-
dc.description.abstractSubband dispersions of quantum-well states in Ag films on Ge(111) have been determined by angle-resolved photoemission. The effective masses of the subbands at the zone center increase substantially for decreasing film thicknesses. This peculiar behavior is attributed to a kinetic constraint for standing-wave formation governed by a momentum-dependent phase-shift function. No evidence is found for in-plane electron localization within the confined geometry.en_US
dc.language.isoen_USen_US
dc.subjecteffective massen_US
dc.subjectelemental semiconductorsen_US
dc.subjectgermaniumen_US
dc.subjectinterface statesen_US
dc.subjectmetallic thin filmsen_US
dc.subjectphotoelectron spectraen_US
dc.subjectsemiconductor quantum wellsen_US
dc.subjectsemiconductor-metal boundariesen_US
dc.subjectsilveren_US
dc.titleEnhancement of subband effective mass in Ag/Ge(111) thin film quantum wellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.78.245407en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume78en_US
dc.citation.issue24en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000262246400074en_US
dc.citation.woscount21en_US
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