标题: | Dependence of Photosensitive Effect on the Defects Created by DC Stress for LTPS TFTs |
作者: | Tai, Ya-Hsiang Kuo, Yan-Fu Lee, Yun-Hsiang 光电工程学系 显示科技研究所 Department of Photonics Institute of Display |
关键字: | DC stress;leakage current;photosensitivity;poly-Si thin-film transistor (TFT) |
公开日期: | 1-十二月-2008 |
摘要: | In this letter, the photosensitive effect of n-type low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) after dc stress was investigated. It was discovered that the photo-generated carrier behaviors under optical illumination are related to defect types created by different stress conditions of hot-carrier effect and self-heating effect. These two types of defect creation result in the different photosensitivity behaviors of LTPS TFT. A model considering the relation between photosensitivity and defect is proposed to explain the anomalous illumination behaviors after device degradation. |
URI: | http://dx.doi.org/10.1109/LED.2008.2006414 http://hdl.handle.net/11536/8086 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2008.2006414 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 29 |
Issue: | 12 |
起始页: | 1322 |
结束页: | 1324 |
显示于类别: | Articles |
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