濺鍍鈀與氧化鈀薄膜應用於奈米裂隙電極製作研究

Abstract

奈米級裂隙電極元件廣泛的運用於不同的領域上，其中做為場發射源的應用亦不在少數。本論文區分成兩個部份來進行奈米級裂隙電極元件場發射源的研究，其一為以磁控濺鍍的方式沉積金屬鈀與氧化鈀，探討濺鍍參數與薄膜特性的關聯，並量測其場發射特性。其二為設計奈米級裂隙電極元件製程以應用於場發射源，並以微影蝕刻等積體電路製程技術，製作奈米級裂隙電極元件。研究結果顯示，在不同的濺鍍壓力以及氬氣/氧氣流量比的條件下，所沉積的氧化鈀膜皆呈現薄片狀的結構，且其隨著參數的不同可獲致不同的薄膜表面型貌、薄膜表面粗糙度、薄片狀尺寸、以及薄片密度。此外，該等場發射的特性優於單以氬氣電漿沉積的金屬鈀。在本研究中，以反應性濺鍍所得具有最佳場發射特性的氧化鈀膜濺鍍參數包括：50 W的射頻功率、3×10-2 Torr的濺鍍壓力、20/20 sccm的氬氣/氧氣流量比。此外，場發射的臨界電壓為42 Volt。

Nanogap-electrode devices have many potential applications in a wide range of technology realms, and application on field emission devices has received much attention. This study is basically divided into two major parts. First, palladium and palladium oxide films were deposited by radio-frequency magnetron sputter deposition on Si substrates, film properties, sputter deposition parameter, and field emission characteristics were studied. Second, conventional integrated circuit processes, such as lithography and reactive ion etch were employed to fabricate nanogap-electrode devices for field emission devices. The results revealed that the palladium oxide films possessed a flake-shaped structure, of which the film properties varied as a function of sputter deposition conditions, such as, the deposition pressure and the Ar/O2 flow rate. The surface morphology and the size and density of the palladium oxide flake were strongly dependent on sputter deposition parameters. Field emission properties of the flake-like PdO thin film were superior to that of the palladium thin film. The deposition parameters for the palladium oxide thin film with the optimal field emission characteristics are as follows: RF power: 50 Watt, sputter pressure: 3×10-2 Torr, and Ar/O2 flow rate: 20/20 sccm. The lowest field emission turn-on voltage of the PdO thin film was 42 Volt. The Pd and PdO thin film strips were prepared in the study as the nanogap-electrodes of field emission devices.