標題: | Electrical bistable memory device based on a poly(styrene-b-4-vinylpyridine) nanostructured diblock copolymer thin film |
作者: | Huang, Ching-Mao Liu, Yung-Sheng Chen, Chen-Chia Wei, Kung-Hwa Sheu, Jeng-Tzong 材料科學與工程學系 材料科學與工程學系奈米科技碩博班 Department of Materials Science and Engineering Graduate Program of Nanotechnology , Department of Materials Science and Engineering |
關鍵字: | nanostructured materials;nanotechnology;polymer blends;polymer films;random-access storage |
公開日期: | 17-十一月-2008 |
摘要: | This paper describes the performance of a nonvolatile memory device based on a solution-processed poly(styrene-b-4-vinylpyridine) (PS-b-P4VP) diblock copolymer thin film. The Al/PS-b-P4VP/indium tin oxide memory device featuring metal-coordinated 30 nm P4VP cores exhibited an ON/OFF ratio of 2x10(5), an erase voltage of 0.75 V, a write voltage of -0.5 V, and a retention time of 10(4) s. The device exhibited a metallic behavior in the ON state, suggesting the formation of metallic filaments through the migration of Al atoms into the P4VP domain during writing. Such nanostructured diblock copolymer thin films open up avenues for fabricating organic memory devices using simple procedures. |
URI: | http://dx.doi.org/10.1063/1.3028336 http://hdl.handle.net/11536/8141 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.3028336 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 93 |
Issue: | 20 |
結束頁: | |
顯示於類別: | 期刊論文 |