Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Huang, Ching-Mao | en_US |
dc.contributor.author | Liu, Yung-Sheng | en_US |
dc.contributor.author | Chen, Chen-Chia | en_US |
dc.contributor.author | Wei, Kung-Hwa | en_US |
dc.contributor.author | Sheu, Jeng-Tzong | en_US |
dc.date.accessioned | 2014-12-08T15:10:38Z | - |
dc.date.available | 2014-12-08T15:10:38Z | - |
dc.date.issued | 2008-11-17 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.3028336 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/8141 | - |
dc.description.abstract | This paper describes the performance of a nonvolatile memory device based on a solution-processed poly(styrene-b-4-vinylpyridine) (PS-b-P4VP) diblock copolymer thin film. The Al/PS-b-P4VP/indium tin oxide memory device featuring metal-coordinated 30 nm P4VP cores exhibited an ON/OFF ratio of 2x10(5), an erase voltage of 0.75 V, a write voltage of -0.5 V, and a retention time of 10(4) s. The device exhibited a metallic behavior in the ON state, suggesting the formation of metallic filaments through the migration of Al atoms into the P4VP domain during writing. Such nanostructured diblock copolymer thin films open up avenues for fabricating organic memory devices using simple procedures. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | nanostructured materials | en_US |
dc.subject | nanotechnology | en_US |
dc.subject | polymer blends | en_US |
dc.subject | polymer films | en_US |
dc.subject | random-access storage | en_US |
dc.title | Electrical bistable memory device based on a poly(styrene-b-4-vinylpyridine) nanostructured diblock copolymer thin film | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.3028336 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 93 | en_US |
dc.citation.issue | 20 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 材料科學與工程學系奈米科技碩博班 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Graduate Program of Nanotechnology , Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000261141400063 | - |
dc.citation.woscount | 12 | - |
Appears in Collections: | Articles |
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