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dc.contributor.authorChen, J. F.en_US
dc.contributor.authorYang, C. H.en_US
dc.contributor.authorWu, Y. H.en_US
dc.contributor.authorChang, L.en_US
dc.contributor.authorChi, J. Y.en_US
dc.date.accessioned2014-12-08T15:10:38Z-
dc.date.available2014-12-08T15:10:38Z-
dc.date.issued2008-11-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3028235en_US
dc.identifier.urihttp://hdl.handle.net/11536/8143-
dc.description.abstractThe effect of a high N incorporation in self-assembled InAs quantum dots (QDs) is investigated by analyzing the electronic and structural properties around QD region. Capacitance-voltage profiling and admittance spectroscopy shows that N incorporation into the InAs QD layer leads to drastic carrier depletion in the QD layer and neighboring GaAs layers due to the formation of a deep defect state at 0.34-0.41 eV. The signature of this defect state is similar to those defects observed in strain relaxed QDs or InGaAs/GaAs quantum wells when the InAs deposition thickness exceeds a critical thickness. Accordingly, the N incorporation might result in strain relaxation either by increasing localized strain or by inducing composition inhomogeneities, which provide nucleation sources for strain relaxation. The argument of strain relaxation is supported by transmission electron microscopy that reveals lattice misfits at the QD layer and neighboring GaAs layers.en_US
dc.language.isoen_USen_US
dc.subjectdeep levelsen_US
dc.subjectdefect statesen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectindium compoundsen_US
dc.subjectinternal stressesen_US
dc.subjectnitrogenen_US
dc.subjectself-assemblyen_US
dc.subjectsemiconductor quantum dotsen_US
dc.subjectstress relaxationen_US
dc.subjecttransmission electron microscopyen_US
dc.titleStrain relaxation in InAs self-assembled quantum dots induced by a high N incorporationen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3028235en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume104en_US
dc.citation.issue10en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000262605800083-
dc.citation.woscount1-
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