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dc.contributor.authorHsieh, C. C.en_US
dc.contributor.authorLin, T. H.en_US
dc.contributor.authorShih, H. C.en_US
dc.contributor.authorHsu, C. -H.en_US
dc.contributor.authorLuo, C. W.en_US
dc.contributor.authorLin, J. -Y.en_US
dc.contributor.authorWu, K. H.en_US
dc.contributor.authorUen, T. M.en_US
dc.contributor.authorJuang, J. Y.en_US
dc.date.accessioned2014-12-08T15:10:38Z-
dc.date.available2014-12-08T15:10:38Z-
dc.date.issued2008-11-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3021112en_US
dc.identifier.urihttp://hdl.handle.net/11536/8144-
dc.description.abstractOrthorhombic YMnO(3) thin films with (200), (020), and (001) orientations were, respectively, obtained by pulsed laser deposition on SrTiO(3)(110), LaAlO(3)(110), and SrTiO(3)(001) substrates. The results demonstrate that the strain between film and substrate can serve as an alternative in transforming the thermodynamically stable hexagonal YMnO(3) into the orthorhombic phase, which previously could be obtained with high-pressure high temperature syntheses and epitaxy-stabilized thin film processes. More importantly, these films allow us, for the first time, to unambiguously disclose the intrinsic magnetic property along different crystallographic orientations. Our results show that, although the antiferromagnetic (AFM) ordering remains the same, there is an additional spin reordering transition which is very much dependent on the crystallographic orientation along which the measuring field was applied and on the in-plane crystallographic alignment of the films. Detailed analyses indicate that the origin of the observed second reordering may be due to some strain-induced canted AFM state instead of the incommensurate lock-in transitions conceived previously.en_US
dc.language.isoen_USen_US
dc.titleMagnetic ordering anisotropy in epitaxial orthorhombic multiferroic YMnO(3) filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3021112en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume104en_US
dc.citation.issue10en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
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