完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lee, Chih-Wen | en_US |
dc.contributor.author | Renaud, Cedric | en_US |
dc.contributor.author | Hsu, Chain-Shu | en_US |
dc.contributor.author | Nguyen, Thien-Phap | en_US |
dc.date.accessioned | 2014-12-08T15:10:39Z | - |
dc.date.available | 2014-12-08T15:10:39Z | - |
dc.date.issued | 2008-11-12 | en_US |
dc.identifier.issn | 0957-4484 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1088/0957-4484/19/45/455202 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/8148 | - |
dc.description.abstract | We report the fabrication and investigations of organic light-emitting diodes (OLEDs) using a composite made by mixing poly[2-methoxy-5(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) with CdSe/ZnS core/shell quantum dots (QDs). The electroluminescence efficiency of the studied devices was found to be improved as compared to devices using MEH-PPV. Moreover, the current density decreased with increasing QD concentration. We checked the effects of QDs on the electrical transport by determining the trap states, making use of the charge-based deep level transient spectroscopy (Q-DLTS) technique. The most striking result obtained is the decrease in trap density when adding QDs to the MEH-PPV polymer film. These results suggest that QDs would heal defects in nanocomposite-based devices and that CdSe/ZnS QDs prevent the trap center formation. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Traps and performance of MEH-PPV/CdSe(ZnS) nanocomposite-based organic light-emitting diodes | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/0957-4484/19/45/455202 | en_US |
dc.identifier.journal | NANOTECHNOLOGY | en_US |
dc.citation.volume | 19 | en_US |
dc.citation.issue | 45 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 應用化學系 | zh_TW |
dc.contributor.department | Department of Applied Chemistry | en_US |
dc.identifier.wosnumber | WOS:000259922000005 | - |
dc.citation.woscount | 14 | - |
顯示於類別: | 期刊論文 |