Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lin, Kuo-Feng | en_US |
dc.contributor.author | Hsieh, Wen-Feng | en_US |
dc.date.accessioned | 2014-12-08T15:10:39Z | - |
dc.date.available | 2014-12-08T15:10:39Z | - |
dc.date.issued | 2008-11-07 | en_US |
dc.identifier.issn | 0022-3727 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1088/0022-3727/41/21/215307 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/8154 | - |
dc.description.abstract | Electronic band structures and surface states were investigated for ZnO finite wells or slabs grown along < 0 0 0 1 > and < 1 - 1 0 0 > directions using tight-binding representation. The dangling bonds on two end-surfaces caused surface bands for different direction grown slabs, of which the wavefunctions tend to localize at the end-surfaces. The increasing splitting of the degenerate surface bands at the Gamma point was observed to decrease with the thickness of the nonpolar [1 - 1 0 0] slab. And the quantum confinement effect is distinctively enhanced by the extra electron field induced in the < 0 0 0 1 > grown finite well with the polar end-surfaces. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Electronic structures and surface states of ZnO finite well structures | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/0022-3727/41/21/215307 | en_US |
dc.identifier.journal | JOURNAL OF PHYSICS D-APPLIED PHYSICS | en_US |
dc.citation.volume | 41 | en_US |
dc.citation.issue | 21 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000260156200036 | - |
dc.citation.woscount | 5 | - |
Appears in Collections: | Articles |
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