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dc.contributor.authorChang, Chih-Pangen_US
dc.contributor.authorWu, Yewchung Sermonen_US
dc.date.accessioned2014-12-08T15:10:45Z-
dc.date.available2014-12-08T15:10:45Z-
dc.date.issued2008-11-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11664-008-0536-yen_US
dc.identifier.urihttp://hdl.handle.net/11536/8225-
dc.description.abstractContinuous-wave (CW) laser crystallization (CLC) of amorphous Si (alpha-Si) has previously been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). Unfortunately, their uniformity was poor because the shape of the beam profiles was Gaussian. In this study, alpha-Si film was replaced by Ni-metal-induced laterally crystallized Si (MILC-Si). MILCLC-Si was MILC-Si irradiated by a CW laser (lambda approximate to 532 nm and power approximate to 3.8 W). It was found that the performance and uniformity of the metal-induced laterally crystallized continuous-wave laser crystallization - thin film transistors (MILCLC-TFTs) were much better than those of the CLC-TFTs. Therefore, the MILCLC-TFT is suitable for application in systems on panels.en_US
dc.language.isoen_USen_US
dc.subjectmetal-induced lateral crystallizationen_US
dc.subjectcontinuous-wave laseren_US
dc.subjectpolycrystalline-silicon thin-film transistorsen_US
dc.titleImproved uniformity and electrical performance of continuous-wave laser-crystallized TFTs using metal-induced laterally crystallized si filmen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s11664-008-0536-yen_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume37en_US
dc.citation.issue11en_US
dc.citation.spage1653en_US
dc.citation.epage1656en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000259697800001-
dc.citation.woscount0-
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