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dc.contributor.authorWang, J. S.en_US
dc.contributor.authorYang, C. S.en_US
dc.contributor.authorLiou, M. J.en_US
dc.contributor.authorWu, C. X.en_US
dc.contributor.authorChiu, K. C.en_US
dc.contributor.authorChou, W. C.en_US
dc.date.accessioned2014-12-08T15:10:46Z-
dc.date.available2014-12-08T15:10:46Z-
dc.date.issued2008-10-15en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2008.07.108en_US
dc.identifier.urihttp://hdl.handle.net/11536/8247-
dc.description.abstractThis work investigated the influence of Zn/O flux ratio and Mn-doped ZnO buffer layer on the epitaxial growth of ZnO grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates. Atomic force microscopy (AFM), photoluminescence (PL) and X-ray diffraction (XRD) measurements indicated that a small amount residual strain of ZnO epilayers was further relaxed under stoichiometric growth conditions due to the better surface migration of the adatoms. Moreover, we observed that a small amount of Mn doping led to obtain a flatter surface with stronger lattice relaxation maybe due to the greatly enhanced surface migration of the adatoms. By adding a Mn-doped ZnO buffer layer the optical and electrical properties of the ZnO epilayers had significant improvement. (c) 2008 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectCharacterizationen_US
dc.subjectReflection high-energy electron diffractionen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectOxidesen_US
dc.subjectZinc compoundsen_US
dc.subjectSemiconducting II-VI materialsen_US
dc.titleInfluence of Zn/O flux ratio and Mn-doped ZnO buffer on the plasma-assisted molecular beam epitaxy of ZnO on c-plane sapphireen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jcrysgro.2008.07.108en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume310en_US
dc.citation.issue21en_US
dc.citation.spage4503en_US
dc.citation.epage4506en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000260988600003-
dc.citation.woscount4-
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