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dc.contributor.authorHsiao, Yu-Shengen_US
dc.contributor.authorWhang, Wha-Tzongen_US
dc.contributor.authorSuen, Shich-Changen_US
dc.contributor.authorShiu, Jau-Yeen_US
dc.contributor.authorChen, Chih-Pingen_US
dc.date.accessioned2014-12-08T15:10:47Z-
dc.date.available2014-12-08T15:10:47Z-
dc.date.issued2008-10-15en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0957-4484/19/41/415603en_US
dc.identifier.urihttp://hdl.handle.net/11536/8248-
dc.description.abstractWe have prepared organic photovoltaic (OPV) cells possessing an ideal bulk heterojunction (BHJ) structure using the self-assembly of copper phthalocyanine (CuPc) as the donor material and fullerene (C(60)) as the acceptor. The variable self-assembly behavior of CuPc on a diverse range of substrates (surface energies) allowed us to control the morphology of the interface and the degree of carrier transportation within the active layer. We observed rod-like CuPc structures on indium-tin oxide (ITO), poly(3,4-ethylenedioxythiophene)poly(4-styrenesulfonate) (PEDOT: PSS) and Au substrates. Accordingly, the interfaces and continuing transport path between CuPc and fullerene domains could be greatly improved due to the ideal BHJ structure. In this paper, we discuss the mechanisms of producing CuPc rod-like films on ITO, PEDOT: PSS and Au. The OPV cell performance was greatly enhanced when a mixture of horizontal and vertical CuPc rods was present on the PEDOT: PSS surfaces, i.e. the power conversion efficiency was 50 times greater than that of the corresponding device featuring a planar CuPc structure.en_US
dc.language.isoen_USen_US
dc.titleMorphological control of CuPc and its application in organic solar cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0957-4484/19/41/415603en_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.citation.volume19en_US
dc.citation.issue41en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000258947100014-
dc.citation.woscount29-
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