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dc.contributor.authorWu, Y. H.en_US
dc.contributor.authorChang, L.en_US
dc.contributor.authorChen, L. C.en_US
dc.contributor.authorChen, H. S.en_US
dc.contributor.authorChen, F. R.en_US
dc.date.accessioned2014-12-08T15:10:47Z-
dc.date.available2014-12-08T15:10:47Z-
dc.date.issued2008-10-13en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2998693en_US
dc.identifier.urihttp://hdl.handle.net/11536/8252-
dc.description.abstractIn this study, the three-dimensional (3D) information about the structural properties of quantum dots (QDs) in InAs/GaAs superlattice structure has been illustrated using electron tomography in the mode of high-angle angular dark-field scanning transmission electron microscopy. Comparison of this 3D reconstruction with the two-dimensional projection at the same positions is made. The structural properties of embedded quantum dots have been evaluated from electron tomography. The correlation relationship of QDs in superlattice structure has been understood by accurate measurements of 3D geometric positions, which can be free of the overlapping effect from 2D cross section along different crystallographic orientations. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2998693]en_US
dc.language.isoen_USen_US
dc.titleGeometrical correlations of quantum dots in InAs/GaAs superlattice structure from electron tomographyen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2998693en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume93en_US
dc.citation.issue15en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000260125100079-
dc.citation.woscount2-
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