完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wu, Y. H. | en_US |
dc.contributor.author | Chang, L. | en_US |
dc.contributor.author | Chen, L. C. | en_US |
dc.contributor.author | Chen, H. S. | en_US |
dc.contributor.author | Chen, F. R. | en_US |
dc.date.accessioned | 2014-12-08T15:10:47Z | - |
dc.date.available | 2014-12-08T15:10:47Z | - |
dc.date.issued | 2008-10-13 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.2998693 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/8252 | - |
dc.description.abstract | In this study, the three-dimensional (3D) information about the structural properties of quantum dots (QDs) in InAs/GaAs superlattice structure has been illustrated using electron tomography in the mode of high-angle angular dark-field scanning transmission electron microscopy. Comparison of this 3D reconstruction with the two-dimensional projection at the same positions is made. The structural properties of embedded quantum dots have been evaluated from electron tomography. The correlation relationship of QDs in superlattice structure has been understood by accurate measurements of 3D geometric positions, which can be free of the overlapping effect from 2D cross section along different crystallographic orientations. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2998693] | en_US |
dc.language.iso | en_US | en_US |
dc.title | Geometrical correlations of quantum dots in InAs/GaAs superlattice structure from electron tomography | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.2998693 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 93 | en_US |
dc.citation.issue | 15 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000260125100079 | - |
dc.citation.woscount | 2 | - |
顯示於類別: | 期刊論文 |