脈衝壓化學氣相沈積製程傳輸現象之模擬研究

Abstract

脈衝壓化學氣相沉積（PPCVD）製程，在先前的研究就已經被證實它與傳統的熱化學氣相沉積過程相比，可以產生高度均勻的沈積薄膜。此外，實驗研究發現，PPCVD製程有非常高的反應物轉換效率，甚至可高達95 ％。在擴大規模(Scale up)的過程中，為了使PPCVD在薄膜沈積過程中成為一個真正可行的工具，非常需要詳細瞭解PPCVD製程傳輸現象。在本論文中，使用平行化的Navier-Stokes equation solver來模擬一個典型PPCVD製程中流體傳輸細微的變化。在泵工作的過程下，模擬的時間達0.1秒。試驗條件包括固定上游全壓（105 Pa）和全溫（300K）和各種反應器壓力(背壓)從102到104 Pa，基板溫度從300K至800K。在PPCVD反應器內可發現非常複雜的瞬時流場，並討論其可能性。在本論文中也評論使用Navier-Stokes equation solver求解PPCVD製程的效度。

Previously pulsed-pressure chemical vapor deposition (PPCVD) process has been demonstrated it could yield highly uniform thin film deposition as compared to conventional thermal chemical vapor deposition process. In addition, very high material conversion efficiency up to 95% was found experimentally. To scale up the process as a practical tool in thin film deposition, detailed understanding of transport phenomena of PPCVD process is stronly required. In this thesis, a parallelized Navier-Stokes equation solver is used to simulate the detailed transient flow structures in a typical PPCVD process during the pump-up process up to 0.1 seconds. Test conditions include fixed upstream stagnation pressure (100,000 Pa) and temperature (300K) and various initial background pressures in the range of 100 through 1,000 Pa. In addition, substrate temperature ranges from 300K to 800K. Very complicated transient flow fields are found inside the PPCVD chamber and discussed wherever are possible. Comments on the validity of using Navier-Stokes equation solver for PPCVD are also presented at the end of the thesis.