標題: Tuning of the electrical characteristics of organic bistable devices by varying the deposition rate of Alq(3) thin film
作者: Lee, Po-Tsung
Chang, Tzu-Yueh
Chen, Szu-Yuan
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: Alq(3);organic bistable device
公開日期: 1-Oct-2008
摘要: Organic bistable devices with an Al/Alq(3)/n-type Si structure are investigated at different deposition rates of Alq3 thin film. We can obtain current-voltage characteristics of these devices similar to those of metal/organic semiconductor/metal structures that are widely used for organic bistable devices. The bistable effect of the Al/Alq(3)/n-type Si structure is primarily caused by the interface defects at the Al/Alq(3) junction. Moreover, the electrical properties of these devices can be modified and controlled by utilizing the appropriate deposition rates of the Alq(3) thin film by thermal deposition. XPS, AFM, and GIXRD measurements are performed to characterize the properties of Alq(3) thin film and Alq(3)/Al interface. This type of devices involves an extremely simple fabrication process and offers great potential in future advanced organic electronics. (C) 2008 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.orgel.2008.06.003
http://hdl.handle.net/11536/8266
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2008.06.003
期刊: ORGANIC ELECTRONICS
Volume: 9
Issue: 5
起始頁: 916
結束頁: 920
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