標題: | Tuning of the electrical characteristics of organic bistable devices by varying the deposition rate of Alq(3) thin film |
作者: | Lee, Po-Tsung Chang, Tzu-Yueh Chen, Szu-Yuan 光電工程學系 顯示科技研究所 Department of Photonics Institute of Display |
關鍵字: | Alq(3);organic bistable device |
公開日期: | 1-Oct-2008 |
摘要: | Organic bistable devices with an Al/Alq(3)/n-type Si structure are investigated at different deposition rates of Alq3 thin film. We can obtain current-voltage characteristics of these devices similar to those of metal/organic semiconductor/metal structures that are widely used for organic bistable devices. The bistable effect of the Al/Alq(3)/n-type Si structure is primarily caused by the interface defects at the Al/Alq(3) junction. Moreover, the electrical properties of these devices can be modified and controlled by utilizing the appropriate deposition rates of the Alq(3) thin film by thermal deposition. XPS, AFM, and GIXRD measurements are performed to characterize the properties of Alq(3) thin film and Alq(3)/Al interface. This type of devices involves an extremely simple fabrication process and offers great potential in future advanced organic electronics. (C) 2008 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.orgel.2008.06.003 http://hdl.handle.net/11536/8266 |
ISSN: | 1566-1199 |
DOI: | 10.1016/j.orgel.2008.06.003 |
期刊: | ORGANIC ELECTRONICS |
Volume: | 9 |
Issue: | 5 |
起始頁: | 916 |
結束頁: | 920 |
Appears in Collections: | Articles |
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