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dc.contributor.authorLin, Rueijeren_US
dc.contributor.authorWu, Tai-boren_US
dc.contributor.authorChu, Ying-Haoen_US
dc.date.accessioned2014-12-08T15:10:49Z-
dc.date.available2014-12-08T15:10:49Z-
dc.date.issued2008-10-01en_US
dc.identifier.issn1359-6462en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.scriptamat.2008.06.045en_US
dc.identifier.urihttp://hdl.handle.net/11536/8278-
dc.description.abstract(00l)-oriented Pb(Zr0.5Ti0.5)O-3/CoFe2O4 (PZT/CFO) multilayer thin films were fabricated with a change in stacking periodicity. When the periodicity increased, a size effect on both ferroelectric and ferromagnetic properties was observed. This result indicates the existence of a passive layer at the PZT/CFO interface. Consequently, the magnetoelectric coupling was significantly degraded with increasing stacking periodicity. From transmission electron microscopy analysis, in addition to slight interdifussion, a highly roughened interface structure is believed to be responsible for the formation of the passive layer. (c) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectmultilayersen_US
dc.subjectmultiferroic filmsen_US
dc.subjectmagnetoelectric voltage coefficienten_US
dc.titleInterface effects on the magnetoelectric properties of (00l)-oriented Pb(Zr0.5Ti0.5)O-3/CoFe2O4 multilayer thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.scriptamat.2008.06.045en_US
dc.identifier.journalSCRIPTA MATERIALIAen_US
dc.citation.volume59en_US
dc.citation.issue8en_US
dc.citation.spage897en_US
dc.citation.epage900en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000259047100025-
dc.citation.woscount19-
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