完整後設資料紀錄
DC 欄位語言
dc.contributor.authorTsai, WCen_US
dc.contributor.authorTseng, TYen_US
dc.date.accessioned2014-12-08T15:02:08Z-
dc.date.available2014-12-08T15:02:08Z-
dc.date.issued1997-01-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.36.76en_US
dc.identifier.urihttp://hdl.handle.net/11536/833-
dc.description.abstractA-axis YBCO thin films deposited on SrTiO3 and MgO substrates were prepared using the template-layer method by off-axis magnetron sputtering. The thin films deposited on MgO with template layers displayed better electrical properties and crystallinity than those deposited on the substrates without template layers, whereas the crystallinity of films deposited on SrTiO3 by the template-layer method showed no improvement. The surface morphology of the films, observed by high-resolution scanning electron microscopy, indicates that the homoepitaxial growth of the a-axis films on template layers on MgO and SrTiO3 results in rougher surfaces than in the case of heteroepitaxial growth of template layers. The possible mechanisms contributing to these differences in surface roughness were carefully investigated. Atomic force microscopy was also used to characterize the initial growth of a-axis films on MgO and SrTiO3. According to the results, the initial growth of a-axis films on MgO and SrTiO3 resembles that of island growth.en_US
dc.language.isoen_USen_US
dc.subjecta-axisen_US
dc.subjectYBCOen_US
dc.subjectsuperconductoren_US
dc.subjectisland growthen_US
dc.subjectthin filmen_US
dc.subjectsurface morphologyen_US
dc.subjectatomic force microscopyen_US
dc.titleA-axis YBCO thin films deposited by DC magnetron sputteringen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.36.76en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume36en_US
dc.citation.issue1Aen_US
dc.citation.spage76en_US
dc.citation.epage83en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1997WG05600013-
dc.citation.woscount2-
顯示於類別:期刊論文


文件中的檔案:

  1. A1997WG05600013.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。