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dc.contributor.authorLu, Tien-changen_US
dc.contributor.authorChen, Shih-Weien_US
dc.contributor.authorKao, Tsung-Tingen_US
dc.contributor.authorLiu, Tzu-Weien_US
dc.date.accessioned2014-12-08T15:10:55Z-
dc.date.available2014-12-08T15:10:55Z-
dc.date.issued2008-09-15en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2986527en_US
dc.identifier.urihttp://hdl.handle.net/11536/8348-
dc.description.abstractCharacteristics of GaN-based photonic crystal surface emitting lasers (PCSELs) were investigated and analyzed. The GaN-based PCSEL emits a blue wavelength at 401.8 nm with a linewidth of 1.6 angstrom and shows a threshold energy density about 2.7 mJ/cm(2) under the optical pumping at room temperature. The lasing wavelength emitted from PCSELs with different lattice constants occurs at the calculated band edges showing different polarization angles due to the light diffracted in specific directions, corresponding exactly to Gamma, K, and M directions in the K-space. Furthermore, the PCSEL also shows a spontaneous emission coupling efficiency beta of about 5 X 10(-3) and a characteristic temperature of 148 K. (C) 2008 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleCharacteristics of GaN-based photonic crystal surface emitting lasersen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2986527en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume93en_US
dc.citation.issue11en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000259797900011-
dc.citation.woscount11-
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