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dc.contributor.authorKao, Kuo-Hsingen_US
dc.contributor.authorChuang, Shiow-Hueyen_US
dc.contributor.authorWu, Woei-Cherngen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.contributor.authorChen, Jian-Haoen_US
dc.contributor.authorMa, Ming-Wenen_US
dc.contributor.authorGao, Reui-Hongen_US
dc.contributor.authorChiang, Michael Y.en_US
dc.date.accessioned2014-12-08T15:10:56Z-
dc.date.available2014-12-08T15:10:56Z-
dc.date.issued2008-09-01en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2978231en_US
dc.identifier.urihttp://hdl.handle.net/11536/8370-
dc.description.abstractThe characteristics of CoTiO(3) high-k dielectric prepared by sol-gel spin coating method had been demonstrated. High electrical permittivity (k similar to 40.2) of CoTiO(3) dielectric was extracted via the transmission electron microscopy image and capacitance-voltage curves. In addition, the valence band offset between thermal SiO(2) and spin-on CoTiO(3) was about 4.0 eV, which was detected by x-ray photoelectron spectroscopy. The band gaps of thermal SiO(2) and spin-on CoTiO(3) were 9.0 and 2.2 eV, respectively. Energy band alignment of spin-on CoTiO(3) directly with SiO(2) and indirectly with Si was determined in this work. (c) 2008 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleX-ray photoelectron spectroscopy energy band alignment of spin-on CoTiO(3) high-k dielectric prepared by sol-gel spin coating methoden_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2978231en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume93en_US
dc.citation.issue9en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
Appears in Collections:Articles