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dc.contributor.authorKo, Tsung-Shineen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorChu, Chia-Puen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2014-12-08T15:10:56Z-
dc.date.available2014-12-08T15:10:56Z-
dc.date.issued2008-09-01en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2008.288en_US
dc.identifier.urihttp://hdl.handle.net/11536/8372-
dc.description.abstractWe describe synthesis of In2O3 nanoloquats grown by thermal evaporation under different oxygen flow rates and temperatures. Gold nanoparticles were used the catalysts and were dispersed on the silicon wafer to assist growth of In2O3 nanoloquats. The nanostructures of In2O3 nanoloquats were characterized by scanning electron microscopy, transmission electron microscopy and X-ray diffraction. The photoluminescence study reveals that In2O3 nanoloquats could emit different broadband luminescence peaks in the range of 410 similar to 620 nm by tuning different oxygen flow rates and temperatures. The wide tuning range in the emission peaks of In2O3 nanoloquats has potential in applications of white light illumination.en_US
dc.language.isoen_USen_US
dc.subjectNanostructureen_US
dc.subjectIn2O3en_US
dc.subjectPhotoluminescenceen_US
dc.subjectWhite Light Emissionen_US
dc.titleThermally Evaporated In2O3 Nanoloquats with Tunable Broad-Band Emissionsen_US
dc.typeArticleen_US
dc.identifier.doi10.1166/jnn.2008.288en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume8en_US
dc.citation.issue9en_US
dc.citation.spage4395en_US
dc.citation.epage4398en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000260776900012-
dc.citation.woscount0-
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