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dc.contributor.authorChen, Y. S.en_US
dc.contributor.authorTseng, T. Y.en_US
dc.date.accessioned2014-12-08T15:10:56Z-
dc.date.available2014-12-08T15:10:56Z-
dc.date.issued2008-09-01en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2008.680en_US
dc.identifier.urihttp://hdl.handle.net/11536/8374-
dc.description.abstractWell directionally grown Ce-doped ZnO nanowires were successfully synthesized by a simple hydrothermal method. The Ce dopant plays a key role in evolving the morphology, affecting the crystalline size, and forming the uniform nanostructure of the ZnO nanowires. The amount of Ce dopant in the ZnO nanowires also affects the regions of blue-shift in the UV and green emission peaks and the intensities of emission peaks based on the cathodoluminescence spectra of the nanowires. Moreover, the effect of Ce doping amount on the microstructure of the nanowires is also presented.en_US
dc.language.isoen_USen_US
dc.subjectHydrothermal Methoden_US
dc.subjectCe Dopanten_US
dc.subjectCathodoluminescenceen_US
dc.titleOptical Properties of Ce-Doped ZnO Nanowires Directionally Grown by Hydrothermal Methoden_US
dc.typeArticleen_US
dc.identifier.doi10.1166/jnn.2008.680en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume8en_US
dc.citation.issue9en_US
dc.citation.spage4514en_US
dc.citation.epage4519en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000260776900031-
dc.citation.woscount9-
Appears in Collections:Articles