完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, Y. S. | en_US |
dc.contributor.author | Tseng, T. Y. | en_US |
dc.date.accessioned | 2014-12-08T15:10:56Z | - |
dc.date.available | 2014-12-08T15:10:56Z | - |
dc.date.issued | 2008-09-01 | en_US |
dc.identifier.issn | 1533-4880 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1166/jnn.2008.680 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/8374 | - |
dc.description.abstract | Well directionally grown Ce-doped ZnO nanowires were successfully synthesized by a simple hydrothermal method. The Ce dopant plays a key role in evolving the morphology, affecting the crystalline size, and forming the uniform nanostructure of the ZnO nanowires. The amount of Ce dopant in the ZnO nanowires also affects the regions of blue-shift in the UV and green emission peaks and the intensities of emission peaks based on the cathodoluminescence spectra of the nanowires. Moreover, the effect of Ce doping amount on the microstructure of the nanowires is also presented. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Hydrothermal Method | en_US |
dc.subject | Ce Dopant | en_US |
dc.subject | Cathodoluminescence | en_US |
dc.title | Optical Properties of Ce-Doped ZnO Nanowires Directionally Grown by Hydrothermal Method | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1166/jnn.2008.680 | en_US |
dc.identifier.journal | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | en_US |
dc.citation.volume | 8 | en_US |
dc.citation.issue | 9 | en_US |
dc.citation.spage | 4514 | en_US |
dc.citation.epage | 4519 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000260776900031 | - |
dc.citation.woscount | 9 | - |
顯示於類別: | 期刊論文 |