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dc.contributor.authorSchroeder, PAen_US
dc.contributor.authorHolody, Pen_US
dc.contributor.authorLoloee, Ren_US
dc.contributor.authorVouille, Cen_US
dc.contributor.authorBarthelemy, Aen_US
dc.contributor.authorFert, Aen_US
dc.contributor.authorHsu, SYen_US
dc.date.accessioned2014-12-08T15:01:11Z-
dc.date.available2014-12-08T15:01:11Z-
dc.date.issued1998-01-01en_US
dc.identifier.issn0304-8853en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0304-8853(97)00366-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/83-
dc.description.abstractWe have observed a positive (inverse) CPP-MR in magnetic multilayers of the forms: (a) ((X) under bar Y/Cu/Co/Cu)(n) with (X) under bar Y being the alloys <(Fe)under bar>Cr, <(Fe)under bar>V. <(Ni)under bar>Cr, <(Co)under bar>Cr, and (b) (Z/Cr/NiFe/Cr)(n) with Z = Fe and Co, For (a) the inverted results arise primarily from spin-dependent scattering in the bulk of the alloy, and are linked consistently to: (1) their magnetization: (2) band-structure calculations and (3) resistivity of bulk alloys. For (b) samples, the inverse MRs arise primarily from the scattering at the Fe/Cr and Co/Cr interfaces, Inverse MR for X/Y interfaces and X/Y alloys (eg. Fe/Cr and <(Fe)under bar>Cr) arises from the similarity of the matching problem of X and Y d levels at interfaces and in alloys. For all (X) under bar Y the CIP-MR was negative confirming that CIP-MR is strongly influenced by channeling effect and current inhomogenieties. (C) 1996 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subject3d metalsen_US
dc.subjectmagnetoresistanceen_US
dc.subjectmultilayersen_US
dc.subjectmagnetic momentsen_US
dc.subjectspin-dependent scatteringen_US
dc.titleUnified picture of spin-dependent transport in GMR multilayered structures and bulk ferromagnetic alloysen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0304-8853(97)00366-1en_US
dc.identifier.journalJOURNAL OF MAGNETISM AND MAGNETIC MATERIALSen_US
dc.citation.volume177en_US
dc.citation.issueen_US
dc.citation.spage1464en_US
dc.citation.epage1465en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000072262200317-
Appears in Collections:Conferences Paper


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