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dc.contributor.authorChen, Jun-Rongen_US
dc.contributor.authorKo, Tsung-Shineen_US
dc.contributor.authorSu, Po-Yuanen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorKuo, Yen-Kuangen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2014-12-08T15:10:59Z-
dc.date.available2014-12-08T15:10:59Z-
dc.date.issued2008-09-01en_US
dc.identifier.issn0733-8724en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JLT.2008.926939en_US
dc.identifier.urihttp://hdl.handle.net/11536/8407-
dc.description.abstractTheoretical analysis for different active layer structures is performed to minimize the laser threshold current of the ultraviolet GaN/AlGaN multiple-quantum-well laser diodes by using advanced device simulation. The simulation results show that the lower threshold current can be obtained when the number of quantum wells is two or three and the aluminum composition in the barrier layer is about 10%-12%. This result is attributed to several different effects including electron leakage current, nonuniform carrier distribution, interface charge density induced by spontaneous and piezoelectric polarization, and optical confinement factor. These internal physical mechanisms are investigated by theoretical calculation to analyze the effects of quantum-well number and different aluminum compositions in barrier layer on laser threshold properties. Furthermore, the effect of quantum-well thickness is discussed as well. It is found that the optimal quantum-well thickness is about 3 nm due to the balance of the advantages of a large confinement factor against the disadvantages of significant quantum-confined Stark effect (QCSE).en_US
dc.language.isoen_USen_US
dc.subjectAlGaNen_US
dc.subjectGaNen_US
dc.subjectnumerical simulationen_US
dc.subjectsemiconductor lasersen_US
dc.subjectultravioleten_US
dc.titleNumerical Study on Optimization of Active Layer Structures for GaN/AlGaN Multiple-Quantum-Well Laser Diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JLT.2008.926939en_US
dc.identifier.journalJOURNAL OF LIGHTWAVE TECHNOLOGYen_US
dc.citation.volume26en_US
dc.citation.issue17-20en_US
dc.citation.spage3155en_US
dc.citation.epage3165en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000262657200020-
dc.citation.woscount9-
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