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dc.contributor.authorLin, Hong-Chingen_US
dc.contributor.authorLin, Pangen_US
dc.contributor.authorLu, Chun-Anen_US
dc.contributor.authorWang, Sea-Fueen_US
dc.date.accessioned2014-12-08T15:11:00Z-
dc.date.available2014-12-08T15:11:00Z-
dc.date.issued2008-09-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.47.7289en_US
dc.identifier.urihttp://hdl.handle.net/11536/8429-
dc.description.abstractThe electrical properties of silver films, prepared using a low-curing-temperature metallo-organic-decomposition (MOD) paste and a high-temperature silver paste screen-printed on polished and nonpolished alumina substrates, at microwave frequency were characterized in this Study. Surface resistance and effective conductivity of the silver films at microwave frequency (approximately 4 GHz) were evaluated using the TE(011) mode of the resonator cavities method. Devices of T-type resonator circuits were fabricated to determine the simulated and measured Q-values and to evaluate the effects of silver films and the surrounding substrate. The surface roughness of the fired films printed on nonpolished Al(2)O(3) substrate is slightly less than those on polished Substrate. because the surface energy of the nonpolished alumina (29.81 mN/m) is slightly less than that of the polished alumina (36.69 mN/m). The calculated effective conductivities at 4.3 GHz are slightly less than the DC conductivities of the films. Moreover, the films prepared using the high temperature silver paste have higher electrical conductivity ranging from 4.08 x 10(7) to 4.13 x 10(7) S/m, Since the high-temperature firing process leads to an improved connectivity of the silver particles. The results indicate that the films screen-printed on the polished substrate have a higher Q and a lower Delta Q value than those of films that are screen-printed on the nonpolished substrate. For the silver films prepared using the high-temperature silver paste, both the Q and Delta Q values were the highest among the films studied, which is consistent with the observation of the dense microstructure of the silver film and the interfacial reaction between the Mass in the film and tie Substrate as a result of high firing temperature.en_US
dc.language.isoen_USen_US
dc.subjectelectrical propertiesen_US
dc.subjectmicrowave frequencyen_US
dc.subjectsilver filmen_US
dc.subjectmetallo-organic decomposition compounden_US
dc.titleHigh-frequency electrical properties of silver thick films measured by dielectric resonator methoden_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.47.7289en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume47en_US
dc.citation.issue9en_US
dc.citation.spage7289en_US
dc.citation.epage7294en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000259657700059-
dc.citation.woscount0-
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