完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Tsai, Chih-Hao | en_US |
dc.contributor.author | Chen, Kuan-Jung | en_US |
dc.contributor.author | Pan, Fu-Ming | en_US |
dc.contributor.author | Lo, Hsiang-Yu | en_US |
dc.contributor.author | Li, Yiming | en_US |
dc.contributor.author | Liu, Mei | en_US |
dc.contributor.author | Mo, Chi-Neng | en_US |
dc.date.accessioned | 2014-12-08T15:11:01Z | - |
dc.date.available | 2014-12-08T15:11:01Z | - |
dc.date.issued | 2007 | en_US |
dc.identifier.issn | 0097-966X | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/8445 | - |
dc.identifier.uri | http://dx.doi.org/10.1889/1.2785368 | en_US |
dc.description.abstract | We have used focused ion beam (FIB) to produce nanogaps on palladium thin film line electrodes. The two facing cross-sections of the as-prepared nanogap were smooth and exhibited a large turn-on voltage for electron field emission depending on the separation of the gap. Hydrogen plasma treatment was used to increase the edge roughness of the nanogap, and thereby dramatically improve the field emission characteristics. For a gap with a separation of 90 nm, the turn-on voltage reduced to 50 V from 175 V after the hydrogen plasma treatment. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Nanogap fabrication on palladium electrodes for field emission display applications | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.doi | 10.1889/1.2785368 | en_US |
dc.identifier.journal | 2007 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXVIII, BOOKS I AND II | en_US |
dc.citation.volume | 38 | en_US |
dc.citation.spage | 583 | en_US |
dc.citation.epage | 585 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000259075300156 | - |
顯示於類別: | 會議論文 |