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dc.contributor.authorYu, Peichenen_US
dc.contributor.authorChiu, C. H.en_US
dc.contributor.authorWu, Yuh-Rennen_US
dc.contributor.authorYen, H. H.en_US
dc.contributor.authorChen, J. R.en_US
dc.contributor.authorKao, C. C.en_US
dc.contributor.authorYang, Han-Weien_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorLu, T. C.en_US
dc.contributor.authorYeh, W. Y.en_US
dc.contributor.authorWang, S. C.en_US
dc.date.accessioned2014-12-08T15:11:02Z-
dc.date.available2014-12-08T15:11:02Z-
dc.date.issued2008-08-25en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2965461en_US
dc.identifier.urihttp://hdl.handle.net/11536/8451-
dc.description.abstractA freestanding nanopillar with a diameter of 300 nm and a height of 2 mu m is demonstrated by focused ion beam milling. The measured microphotoluminescence (mu-PL) from the embedded InGaN/GaN multiple quantum wells shows a blueshift of 68 meV in energy with a broadened full width at half maximum, similar to 200 meV. Calculations based on the valence force field method suggest that the spatial variation of the strain tensors in the nanopillar results in the observed energy shift and spectrum broadening. Moreover, the power-dependent mu-PL measurement suggests that the strain-relaxed emission region exhibits a higher radiative recombination rate than that of the strained region, indicating potential for realizing high-efficiency nanodevices in the UV/blue wavelength range. (C) 2008 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleStrain relaxation induced microphotoluminescence characteristics of a single InGaN-based nanopillar fabricated by focused ion beam millingen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2965461en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume93en_US
dc.citation.issue8en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000259011900010-
dc.citation.woscount14-
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