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dc.contributor.authorLo, Hsiang-Yuen_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorChao, Hsueh-Yungen_US
dc.contributor.authorTsai, Chih-Haoen_US
dc.contributor.authorPan, Fu-Mingen_US
dc.contributor.authorKuo, Ting-Chenen_US
dc.contributor.authorLiu, Maien_US
dc.contributor.authorMo, Chi-Nengen_US
dc.date.accessioned2014-12-08T15:11:02Z-
dc.date.available2014-12-08T15:11:02Z-
dc.date.issued2007en_US
dc.identifier.issn0097-966Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/8457-
dc.identifier.urihttp://dx.doi.org/10.1889/1.2785369en_US
dc.description.abstractWe for the first time explore a novel structure of Pd thin-film emitter fabricated on the substrate with various gaps ranging from mn to 90 nm. With the 3D electromagnetic particle-in-cell (PIC) simulation, we study the conducting mechanism and driving current for the new device with one palladium field emission emitter. Compared with the experimental data, our calibrated simulation predicts a high emission efficiency of the investigated device structure. It is found that the turn-on voltage is about 50V and a very high electron emission current of 0.1 mA is estimated at the anode voltage of 80 V for one emitter. The novel structure Of surface conduction electron-emitter (SCE) has the advantages of the simple fabrication and the high emission efficiency. Based upon the numerical procedure, we are currently investigating the emission efficiency for more advanced structures of SCE.en_US
dc.language.isoen_USen_US
dc.titleThree-dimensional simulation of novel surface conduction electron-emittersen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1889/1.2785369en_US
dc.identifier.journal2007 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXVIII, BOOKS I AND IIen_US
dc.citation.volume38en_US
dc.citation.spage586en_US
dc.citation.epage589en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000259075300157-
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