完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, Chao-Jung | en_US |
dc.contributor.author | Hwang, Shiao-Wen | en_US |
dc.contributor.author | Chen, Chin H. | en_US |
dc.date.accessioned | 2014-12-08T15:11:06Z | - |
dc.date.available | 2014-12-08T15:11:06Z | - |
dc.date.issued | 2007 | en_US |
dc.identifier.issn | 0097-966X | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/8501 | - |
dc.identifier.uri | http://dx.doi.org/10.1889/1.2785434 | en_US |
dc.description.abstract | P-i-n devices with 5% Cs doped Men as the n-type transporting layer and WO3 doped NPB as the p-type transporting layer are investigated for controlling the recombination zone (RZ) of carriers in WOLED based on three adjacent fluorescent red, green and blue emitters. Variation in while CIEx,y color-coordinates are closely related to the proportion of deep blue emission which serves as an indicator for the position of the RZ. By optimizing the concentration of the deep blue dopant, it is possible to enhance the color temperature of WOLED and boost the efficiency to 8 cd/A at 5.5 V (20 mA/cm2) with CIEx,y of (0.33, 0.34) which is among the best reported for the fluorescent RGB 3-emission WOLEDs. | en_US |
dc.language.iso | en_US | en_US |
dc.title | High-color-temperature p-i-n white organic light-emitting devices based on the fluorescent RGB system | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.doi | 10.1889/1.2785434 | en_US |
dc.identifier.journal | 2007 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXVIII, BOOKS I AND II | en_US |
dc.citation.volume | 38 | en_US |
dc.citation.spage | 823 | en_US |
dc.citation.epage | 825 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000259075300221 | - |
顯示於類別: | 會議論文 |