完整後設資料紀錄
DC 欄位語言
dc.contributor.authorPeng, Peng-Chunen_US
dc.contributor.authorYeh, Chao-Enen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorXuan, Ronen_US
dc.contributor.authorLin, Chun-Tingen_US
dc.contributor.authorLin, Grayen_US
dc.contributor.authorChi, Sienen_US
dc.contributor.authorChi, Jim Y.en_US
dc.date.accessioned2014-12-08T15:11:06Z-
dc.date.available2014-12-08T15:11:06Z-
dc.date.issued2008-08-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.47.6357en_US
dc.identifier.urihttp://hdl.handle.net/11536/8504-
dc.description.abstractIn the study we experimentally investigated the relative intensity noise (RIN) characteristics of a quantum-dot vertical-cavity surface-emitting laser (QD VCSEL). The single-mode QD VCSEL grown on a GaAs substrate is a fully doped structure. Additionally. the resonance frequency of the QD VCSEL with external light injection is as high as 19.2 GHz.en_US
dc.language.isoen_USen_US
dc.subjectquantum dotsen_US
dc.subjectvertical-cavity surface-emitting laseren_US
dc.subjectrelative intensity noiseen_US
dc.titleRelative Intensity Noise Characteristics of Long-Wavelength Quantum Dot Vertical-Cavity Surface-Emitting Lasersen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.47.6357en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume47en_US
dc.citation.issue8en_US
dc.citation.spage6357en_US
dc.citation.epage6358en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000260003000036-
dc.citation.woscount3-
顯示於類別:期刊論文


文件中的檔案:

  1. 000260003000036.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。