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dc.contributor.authorLi, Sheng-Yenen_US
dc.contributor.authorChu, Hsin-Senen_US
dc.contributor.authorYan, Wei-Monen_US
dc.date.accessioned2014-12-08T15:11:11Z-
dc.date.available2014-12-08T15:11:11Z-
dc.date.issued2008-07-15en_US
dc.identifier.issn0017-9310en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.ijheatmasstransfer.2008.01.004en_US
dc.identifier.urihttp://hdl.handle.net/11536/8573-
dc.description.abstractThis study analyzes the phonon radiative transfer in two-dimensional porous silicon nanostructures with a phonon transport model based on the Boltzmann transportation equation. We focus on the inter-scattering between pores. The numerical results show that when the aspect ratio is less than 1.22, the scale factor dominates the thermal conductivity, and the thermal conductivity of nanostructures with in-line arrangement pores is determined by the dependent phonon scattering effect. In nanostructures with staggered arrangement pores, the phonons are prevented from transporting through the material. In general, the results show that the larger the pore size, the lower the thermal conductivity of the nanostructure. The results presented in this study provide a useful reference for the development of high-efficiency thermoelectric structures. (C) 2008 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleNumerical study of phonon radiative transfer in porous nanostructuresen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.ijheatmasstransfer.2008.01.004en_US
dc.identifier.journalINTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFERen_US
dc.citation.volume51en_US
dc.citation.issue15-16en_US
dc.citation.spage3924en_US
dc.citation.epage3931en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.identifier.wosnumberWOS:000257820300020-
dc.citation.woscount3-
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