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dc.contributor.authorSyu, J. -S.en_US
dc.contributor.authorMeng, C.en_US
dc.contributor.authorYu, S. -W.en_US
dc.date.accessioned2014-12-08T15:11:12Z-
dc.date.available2014-12-08T15:11:12Z-
dc.date.issued2008-07-03en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://dx.doi.org/10.1049/el:20080897en_US
dc.identifier.urihttp://hdl.handle.net/11536/8585-
dc.description.abstractA broadband Gilbert downconverter with an integrated dual Marchand balun (balanced to unbalanced transformer) is demonstrated by using 0.35 mu m SiGe heterojunction bipolar transistor (HBT) technology. A dual Marchand balun consisting of a lower band balun and an upper band balun is employed in the LO stage of the downconverter to maintain balanced LO signals from 1.8 to 36 GHz. The broadband downconverter has peak conversion gain of 3 dB at RF = 3 GHz and 3 dB bandwidth of 1.8 to 20 GHz at 3.3 V DC supply.en_US
dc.language.isoen_USen_US
dc.titleBroadband SiGe HBT Gilbert downconverter with 1.8 to 36 GHz integrated dual Marchand balunen_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el:20080897en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume44en_US
dc.citation.issue14en_US
dc.citation.spage861en_US
dc.citation.epageU187en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000257782000019-
dc.citation.woscount1-
Appears in Collections:Articles


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