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dc.contributor.authorLo, Hsiang-Yuen_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorTsai, Chih-Haoen_US
dc.contributor.authorChao, Hsueh-Yung (Robert)en_US
dc.contributor.authorPan, Fu-Mingen_US
dc.date.accessioned2014-12-08T15:11:13Z-
dc.date.available2014-12-08T15:11:13Z-
dc.date.issued2008-07-01en_US
dc.identifier.issn1536-125Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/TNANO.2008.926347en_US
dc.identifier.urihttp://hdl.handle.net/11536/8598-
dc.description.abstractIn this paper, we explore the effect of process variation on field emission characteristics in surface-conduction electron emitters. The structure of Pd thin-film emitter is fabricated on the substrate and the nanometer scale gap is formed by the focused ion beam technique. Different shapes of nanogaps due to the process variations are investigated by the experiment and three-dimensional Maxwell particle-in-cell simulation. Four deformation structures are examined, and it is found that the type I exhibits high emission efficiency due to a stronger electric field around the apex and larger emission current among structures. The electron emission current is dependent upon the angle of inclination of surface. Hydrogen plasma treatment is also used to increase the edge roughness of the nanogap and thereby dramatically improve the field emission characteristics. For the nanogap with a separation of 90 nm, the turn-on voltage significantly reduces from 60 to 20 V after the hydrogen plasma treatment.en_US
dc.language.isoen_USen_US
dc.subjectangle of inclination of surfaceen_US
dc.subjectfield emissionen_US
dc.subjecthydrogen plasmaen_US
dc.subjectMaxwell equationsen_US
dc.subjectnanogapen_US
dc.subjectPden_US
dc.subjectparticle-in-cell (PIC) simulationen_US
dc.subjectprocess variationsen_US
dc.subjectshapeen_US
dc.subjectsurface-conduction electron emitters (SCEs)en_US
dc.subjectthin-film emitteren_US
dc.subjectturn-on voltageen_US
dc.titleEffect of process variation on field emission characteristics in surface-conduction electron emittersen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TNANO.2008.926347en_US
dc.identifier.journalIEEE TRANSACTIONS ON NANOTECHNOLOGYen_US
dc.citation.volume7en_US
dc.citation.issue4en_US
dc.citation.spage434en_US
dc.citation.epage439en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000258766300009-
dc.citation.woscount6-
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