Impact of process-induced strain on Coulomb scattering mobility in short-channel n-MOSFETs

Abstract

This letter provides an experimental assessment of Coulomb scattering mobility for advanced short-channel strained devices. By accurate mobility extraction under various temperatures, we examine the impact of process-induced uniaxial strain on Coulomb mobility in short-channel nMOSFETs. This letter indicates that the Coulomb mobility has significant stress dependency. Moreover, the stress sensitivity of the Coulomb mobility shows strong temperature, dependence. Because it is the interface scattering that counteracts the stress sensitivity of the bulk-impurity-limited mobility, further reducing the interface charges will be crucial to future mobility scaling.