完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Li, Zhen-Yu | en_US |
dc.contributor.author | Lan, Shan-Ming | en_US |
dc.contributor.author | Uen, Wu-Yih | en_US |
dc.contributor.author | Chen, Ying-Ru | en_US |
dc.contributor.author | Chen, Meng-Chu | en_US |
dc.contributor.author | Huang, Yu-Hsiang | en_US |
dc.contributor.author | Ku, Chien-Te | en_US |
dc.contributor.author | Liao, Sen-Mao | en_US |
dc.contributor.author | Yang, Tsun-Neng | en_US |
dc.contributor.author | Wang, Shing-Chung | en_US |
dc.contributor.author | Chi, Gou-Chung | en_US |
dc.date.accessioned | 2014-12-08T15:11:16Z | - |
dc.date.available | 2014-12-08T15:11:16Z | - |
dc.date.issued | 2008-07-01 | en_US |
dc.identifier.issn | 0734-2101 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1116/1.2929849 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/8650 | - |
dc.description.abstract | Indium nitride (InN) epilayers have been successfully grown on Si (111) substrates with low-temperature (450 degrees C) grown InN and high-temperature (1050 degrees C) grown AlN (InN/AlN) double-buffer layers by atmospheric-pressure metal-organic chemical vapor deposition (AP-MOCVD). X-ray diffraction characterizations indicated that highly (0001)-oriented hexagonal InN was grown on Si (111) substrate. Photoluminescence (PL) analyses performed at room temperature showed a strong emission at 0.72 eV with a full width at half maximum of 121 meV. Excitation intensity dependent measurements demonstrated the PL mechanism to be the band-to-band transition. Time-resolved PL could be fitted by a single exponential exhibiting an ordered film and a recombination lifetime of around 0.85 ns. In particular, transmission electron microscopy characterizations indicated that the use of AlN first buffer is very important to achieve a structurally uniform (0001)-oriented InN epilayer on Si (111) by AP-MOCVD. (C) 2008 American Vacuum Society. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Growth of InN on Si (111) by atmospheric-pressure metal-organic chemical vapor deposition using InN/AlN double-buffer layers | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1116/1.2929849 | en_US |
dc.identifier.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | en_US |
dc.citation.volume | 26 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | 587 | en_US |
dc.citation.epage | 591 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000257424200005 | - |
dc.citation.woscount | 7 | - |
顯示於類別: | 期刊論文 |