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dc.contributor.authorTseng, Chi-Cheen_US
dc.contributor.authorChou, Shu-Tingen_US
dc.contributor.authorChen, Yi-Haoen_US
dc.contributor.authorChen, Cheng-Nanen_US
dc.contributor.authorLin, Wei-Hsunen_US
dc.contributor.authorChung, Tung-Hsunen_US
dc.contributor.authorLin, Shih-Yenen_US
dc.contributor.authorChiu, Pei-Chinen_US
dc.contributor.authorChyi, Jen-Innen_US
dc.contributor.authorWu, Meng-Chyien_US
dc.date.accessioned2014-12-08T15:11:17Z-
dc.date.available2014-12-08T15:11:17Z-
dc.date.issued2008-07-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2008.926020en_US
dc.identifier.urihttp://hdl.handle.net/11536/8663-
dc.description.abstractTen-period InAs-GaAs quantum-dot (QD) infrared photodetectors grown under different In adatom supply procedures are investigated. Two In adatom supply procedures of In shutter 1) always opened and 2) periodically opened/closed are adopted in this letter. Larger QD sizes in both height and diameter and more uniform size distribution are observed for samples grown under an In shutter periodically opened/closed condition. The device with QDs grown under the In shutter always opened condition has revealed shorter detection wavelengths and enhanced normal incident absorption. The phenomenon shows that beside the increase of energy difference between confinement states, smaller QD sizes would also enhance the normal incident absorption predicted for the theoretically zero-dimensional QD structures.en_US
dc.language.isoen_USen_US
dc.subjectquantum dot (QD)en_US
dc.subjectquantum-dot infrared photodetector (QDIP)en_US
dc.titleEnhanced normal-incident absorption of quantum-dot infrared photodetectors with smaller quantum dotsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2008.926020en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume20en_US
dc.citation.issue13-16en_US
dc.citation.spage1240en_US
dc.citation.epage1242en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000258505800054-
dc.citation.woscount8-
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