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dc.contributor.authorChen, I-Janen_US
dc.contributor.authorOu, Yi-Chingen_US
dc.contributor.authorWu, Zhong-Yien_US
dc.contributor.authorChen, Fu-Rongen_US
dc.contributor.authorKai, Ji-Jungen_US
dc.contributor.authorLin, Juhn-Jongen_US
dc.contributor.authorJian, Wen-Binen_US
dc.date.accessioned2014-12-08T15:11:20Z-
dc.date.available2014-12-08T15:11:20Z-
dc.date.issued2008-06-26en_US
dc.identifier.issn1932-7447en_US
dc.identifier.urihttp://dx.doi.org/10.1021/jp711775ren_US
dc.identifier.urihttp://hdl.handle.net/11536/8699-
dc.description.abstractZn0.92Co0.08O nanowires with two different average diameters, 19 and 38 nm, have been made by the vapor transport and Co ion implantation method. The as-implanted nanowires were thermally annealed through multiple steps in a high vacuum. The morphology and crystal structure of the nanowires were inspected by use of scanning and transmission electron microscopes. Electron microscopy analysis was used to ensure the absence of Co nanocrystals in the annealed nanowires. Measurements of temperature-dependent hysteresis were carried out to demonstrate a strong magnetic state in the high-vacuum annealed samples. The coercive field obeying a square-root temperature dependence and the room-temperature ferromagnetism have been discovered. Moreover, by comparison of magnetic properties between different-diameter nanowires, field-dependent magnetizations reveal considerably stronger ferromagnetism in the smaller diameter (19 nm) Zn0.92Co0.08O nanowires than that in the larger diameter (38 nm) nanowires. We argue that the generation of point defects by thermal annealing is the origin for the enhanced ferromagnetism in our high-vacuum annealed nanowires.en_US
dc.language.isoen_USen_US
dc.titleSize effects on thermal treatments and room-temperature ferromagnetism in high-vacuum annealed ZnCoO nanowiresen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/jp711775ren_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY Cen_US
dc.citation.volume112en_US
dc.citation.issue25en_US
dc.citation.spage9168en_US
dc.citation.epage9171en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000256920000009-
dc.citation.woscount14-
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