完整後設資料紀錄
DC 欄位語言
dc.contributor.authorJian, Sheng-Ruien_US
dc.contributor.authorJang, Jason Shian-Chingen_US
dc.contributor.authorLai, Yi-Shaoen_US
dc.contributor.authorYang, Ping-Fengen_US
dc.contributor.authorYang, Chu-Shouen_US
dc.contributor.authorWen, Hua-Chiangen_US
dc.contributor.authorTsai, Chien-Huangen_US
dc.date.accessioned2014-12-08T15:11:21Z-
dc.date.available2014-12-08T15:11:21Z-
dc.date.issued2008-06-15en_US
dc.identifier.issn0254-0584en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.matchemphys.2007.12.007en_US
dc.identifier.urihttp://hdl.handle.net/11536/8716-
dc.description.abstractWe report in this study characteristics of InGaN thin films developed by metal-organic chemical vapor deposition (MOCVD) at various growth temperatures. The effect of deposition temperatures on microstructures and mechanical properties are examined using X-ray diffraction (XRD), scanning probe microscopy (SPM), and nanoindentation techniques. The XRD analysis shows no evidence of phase separation for InGaN thin films. The SPM micrographs indicate that the films have relatively smooth surfaces. Hardness and Young's modulus of InGaN thin films vary according to the deposition temperature. As the deposition temperature increases from 730 to 790 degrees C, the grain size increases from 28 to 52 nm. Hardness for InGaN thin films dropped from 13.8 to 17.6 GPa in accordance with the increase of the grain size. By fitting experimental data with the Hall-Petch equation, a probable lattice friction stress of 3.48 GPa and Hall-Petch constant of 73.15 GPa nm(1/2) are obtained. (C) 2007 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectnanoindentationen_US
dc.subjectInGaNen_US
dc.subjectXRDen_US
dc.subjectMOCVDen_US
dc.titleMechanical properties of InGaN thin films deposited by metal-organic chemical vapor depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.matchemphys.2007.12.007en_US
dc.identifier.journalMATERIALS CHEMISTRY AND PHYSICSen_US
dc.citation.volume109en_US
dc.citation.issue2-3en_US
dc.citation.spage360en_US
dc.citation.epage364en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000255692100031-
dc.citation.woscount17-
顯示於類別:期刊論文


文件中的檔案:

  1. 000255692100031.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。