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dc.contributor.authorKu, TKen_US
dc.contributor.authorChen, SHen_US
dc.contributor.authorYang, CDen_US
dc.contributor.authorShe, NJen_US
dc.contributor.authorTarntair, FGen_US
dc.contributor.authorWang, CCen_US
dc.contributor.authorChen, CFen_US
dc.contributor.authorHsieh, IJen_US
dc.contributor.authorCheng, HCen_US
dc.date.accessioned2014-12-08T15:02:11Z-
dc.date.available2014-12-08T15:02:11Z-
dc.date.issued1996-12-15en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0040-6090(96)09068-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/871-
dc.description.abstractA new fabrication technology of polycrystalline diamond-clad Si microtips using microwave plasma chemical vapor deposition (MPCVD) has been developed to improve the characteristics of electron field emission from the pure Si tips. A uniform and smooth coating morphology for the diamond-clad Si tips have been achieved. Electron emission currents of diamond-clad tips are much higher than those of pure Si tips. Such great improvement is attributed to the lowering of the effective work function in the diamond-clad tips. The effects of phosphorus- and boron-doped diamond-clad Si tips have been also studied in comparison with the undoped ones. The current-voltage characteristics of the undoped diamond-clad tips were further enhanced by the in-situ doping of phosphorus or boron due to a higher electron supplement. Moreover, the P-doped diamond-clad tips show a better field emission performance as compared to the B-doped ones. This difference is surmised to be associated with the higher electron conductivity and defect densities of P-doped diamond films.en_US
dc.language.isoen_USen_US
dc.subjectdiamond-clad silicon tipsen_US
dc.subjectfield emissionen_US
dc.subjectfield emitter arraysen_US
dc.subjecteffective work functionen_US
dc.titleEnhanced electron emission from phosphorous- and boron-doped diamond-clad Si field emitter arraysen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0040-6090(96)09068-2en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume290en_US
dc.citation.issueen_US
dc.citation.spage176en_US
dc.citation.epage180en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996WB81900036-
Appears in Collections:Conferences Paper


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