Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions

doi:10.1021/la8000575

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Huang, Ting-Kai	en_US
dc.contributor.author	Chen, Ying-Chieh	en_US
dc.contributor.author	Ko, Hsin-Chun	en_US
dc.contributor.author	Huang, Hsin-Wei	en_US
dc.contributor.author	Wang, Chia-Hsin	en_US
dc.contributor.author	Lin, Huang-Kai	en_US
dc.contributor.author	Chen, Fu-Rong	en_US
dc.contributor.author	Kai, Ji-Jung	en_US
dc.contributor.author	Lee, Chi-Young	en_US
dc.contributor.author	Chiu, Hsin-Tien	en_US
dc.date.accessioned	2014-12-08T15:11:22Z	-
dc.date.available	2014-12-08T15:11:22Z	-
dc.date.issued	2008-06-03	en_US
dc.identifier.issn	0743-7463	en_US
dc.identifier.uri	http://dx.doi.org/10.1021/la8000575	en_US
dc.identifier.uri	http://hdl.handle.net/11536/8731	-
dc.description.abstract	A simple galvanic reduction for direct growth of An nanowires on silicon wafers is developed. The nanowires were prepared by reacting HAuCl4(aq) with Sn-(s) in the presence of CTAC((aq)) (cetyltrimethylammonium chloride) and NaNO3(aq), which were important to the product morphology development. The nanowire diameter was 50-100 nm, and the length was more than 20 mu m.	en_US
dc.language.iso	en_US	en_US
dc.title	Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1021/la8000575	en_US
dc.identifier.journal	LANGMUIR	en_US
dc.citation.volume	24	en_US
dc.citation.issue	11	en_US
dc.citation.spage	5647	en_US
dc.citation.epage	5649	en_US
dc.contributor.department	應用化學系	zh_TW
dc.contributor.department	Department of Applied Chemistry	en_US
dc.identifier.wosnumber	WOS:000256232900003	-
dc.citation.woscount	22	-
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