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dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorLin, Hsuanen_US
dc.contributor.authorWang, Sheng-Yunen_US
dc.contributor.authorLin, Chia-Hsienen_US
dc.contributor.authorCheng, Shun-Jenen_US
dc.contributor.authorLee, Ming-Chihen_US
dc.contributor.authorChen, Wen-Yenen_US
dc.contributor.authorHsu, Tzu-Minen_US
dc.contributor.authorHsieh, Tung-Poen_US
dc.contributor.authorChyi, Jen-Innen_US
dc.date.accessioned2019-04-03T06:40:21Z-
dc.date.available2019-04-03T06:40:21Z-
dc.date.issued2008-06-01en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.77.245314en_US
dc.identifier.urihttp://hdl.handle.net/11536/8743-
dc.description.abstractWe present a spectroscopic study of single quantum dot molecules (QDMs) formed by two closely stacked In(0.5)Ga(0.5)As layers. The exciton fine structures as well as direct and indirect excitonic species associated with QDMs were identified by power dependent and polarization resolved microphotoluminescence measurements. As the temperature was increased, a directional energy transfer between the direct and indirect excitons in single QDMs was observed. A rate-equation model was developed to explain our data. We show that a phonon-assisted nonresonant tunneling of the hole between the two adjacent dots is responsible for such directional energy transfers in QDMs.en_US
dc.language.isoen_USen_US
dc.titleNonresonant carrier transfer in single InGaAs/GaAs quantum dot moleculesen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.77.245314en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume77en_US
dc.citation.issue24en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000257289700073en_US
dc.citation.woscount11en_US
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