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dc.contributor.authorShaltiel, D.en_US
dc.contributor.authorvon Nidda, H. -A. Krugen_US
dc.contributor.authorShapiro, B. Ya.en_US
dc.contributor.authorRosenstein, B.en_US
dc.contributor.authorLoidl, A.en_US
dc.contributor.authorBogoslavsky, B.en_US
dc.contributor.authorShapiro, I.en_US
dc.contributor.authorTamegai, T.en_US
dc.date.accessioned2019-04-03T06:40:23Z-
dc.date.available2019-04-03T06:40:23Z-
dc.date.issued2008-06-01en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.77.214522en_US
dc.identifier.urihttp://hdl.handle.net/11536/8747-
dc.description.abstractIn the "induced microwave dissipation by ac magnetic field" (IMDACMF) technique, only the motion of Josephson vortices (JV) but not of pancake vortices (PV) induces microwave dissipation. This unique property is used to investigate the interaction between JV and PV in the high anisotropy superconductor Bi2212 as a function of magnetic field and tilting angle away from the a-b plane. In general, pinning of JV by PV inhibits the motion of the JV and, thus, reduces the microwave dissipation. Almost no pinning of JV is obtained at low dc magnetic fields even at high-tilting angles. Strong pinning of JV due to their interaction with PV is observed at higher magnetic fields and at tilting angles between 50 degrees and 90 degrees. The technique enables to observe transitions from the JV state to the crossing lattice state, without and with interaction between JV and PV, and to the one-dimensional vortex chains. The results obtained by the present technique are compared to results of surface imaging techniques, which investigate the interaction between PV and JV probing the PV.en_US
dc.language.isoen_USen_US
dc.titleInteraction between Josephson and pancake vortices investigated by the induced microwave dissipation by ac magnetic field techniqueen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.77.214522en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume77en_US
dc.citation.issue21en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000257288900107en_US
dc.citation.woscount6en_US
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