Dynamic negative bias temperature instability in low-temperature poly-Si thin-film transistors

Abstract

Dynamic negative bias temperature instability in p-channel low-temperature poly-Si thin-film transistors was studied in this paper. The degradation of the devices was found to be voltage and temperature dependent. In addition, the frequency and duty ratio of the gate pulse affects the degree of the device degradation. The mechanism of the device degradation was investigated, and a physical model is proposed to explain the mechanism.