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dc.contributor.authorYang, Po-Chunen_US
dc.contributor.authorKuo, Chien-Chihen_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2014-12-08T15:11:27Z-
dc.date.available2014-12-08T15:11:27Z-
dc.date.issued2008-06-01en_US
dc.identifier.issn1047-4838en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11837-008-0077-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/8791-
dc.description.abstractThe effect of pre-aging on electromigration is investigated in this study using flip-chip SnAg solder joints. The solder joints were pre-aged at 170 degrees C for 1 h, 3 h, 5 h, 10 h, 25 h, and 50 h, and then they were subjected to electromigration tests of 0.9 A at 150 degrees C. It was found that the average failure time increased about three times when the joints were pre-aged for 3 h to 25 h. But it decreased when the joints were over-aged. It is proposed that the major contributor to the prolonged failure time may be the densification of the nickel and copper under-bump metallization (UBM) and the solder due to the aging treatment. The pre-aging treatment at 170 degrees C may stabilize the microstructure of the solder. The vacancies in the solder were annihilated during the heat treatment, causing a slower diffusion rate. In addition, the UBM structure became denser after the pre-aging process. Thus, the denser UBM structure may lead to slower consumption rates of the nickel and copper layers, resulting in the enhancement of electromigration resistance.en_US
dc.language.isoen_USen_US
dc.titleThe effect of pre-aging on the electromigration of flip-chip SnAg solder jointsen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s11837-008-0077-0en_US
dc.identifier.journalJOMen_US
dc.citation.volume60en_US
dc.citation.issue6en_US
dc.citation.spage77en_US
dc.citation.epage80en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000256701200015-
dc.citation.woscount0-
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