標題: | Enhancement-mode polymer space-charge-limited transistor with low switching swing of 96 mV/decade |
作者: | Chao, Yu-Chiang Tsai, Hung-Kuo Zan, Hsiao-Wen Hsu, Yung-Hsuan Meng, Hsin-Fei Horng, Sheng-Fu 物理研究所 光電工程學系 Institute of Physics Department of Photonics |
公開日期: | 30-五月-2011 |
摘要: | In this letter, an enhancement-mode polymer space-charge-limited transistor was realized with a low switching swing of 96 mV/decade, a low operation voltage of 1.5 V, and a high on/off current ratio of 10(4). By investigating the influence of the device's geometric parameters on the transistor characteristics, a low switching swing was obtained by positioning the base electrode at the middle of the channel length and reducing the opening diameter. Simulations of the potential distribution at the central vertical channel verified that the base electrode has the best control over the magnitude of potential barrier, resulting in a low switching swing. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3586255] |
URI: | http://dx.doi.org/10.1063/1.3586255 http://hdl.handle.net/11536/8836 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.3586255 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 98 |
Issue: | 22 |
結束頁: | |
顯示於類別: | 期刊論文 |