Threshold gain analysis in GaN-based photonic crystal surface emitting lasers

doi:10.1364/OL.36.001908

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Weng, Peng-Hsiang	en_US
dc.contributor.author	Wu, Tzeng-Tsong	en_US
dc.contributor.author	Lu, Tien-Chang	en_US
dc.contributor.author	Wang, Shing-Chung	en_US
dc.date.accessioned	2014-12-08T15:11:33Z	-
dc.date.available	2014-12-08T15:11:33Z	-
dc.date.issued	2011-05-15	en_US
dc.identifier.issn	0146-9592	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/OL.36.001908	en_US
dc.identifier.uri	http://hdl.handle.net/11536/8851	-
dc.description.abstract	We have analyzed threshold gains and lasing modes in GaN-based photonic crystal (PC) surface emitting lasers (PCSELs) by using the multiple scattering method (MSM) for triangular-lattice PC patterns. Moreover, GaN-based PCSELs with different boundary shapes have been fabricated and measured. The lasing mode at the G band edge of GaN-based PCSELs can be identified by using the angled resolved spectroscopy and matched well to the results calculated by MSM. Threshold conditions in the GaN-based PCSELs with different boundary shapes are obtained by optical pumping and agree well with simulation results. (C) 2011 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Threshold gain analysis in GaN-based photonic crystal surface emitting lasers	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1364/OL.36.001908	en_US
dc.identifier.journal	OPTICS LETTERS	en_US
dc.citation.volume	36	en_US
dc.citation.issue	10	en_US
dc.citation.spage	1908	en_US
dc.citation.epage	1910	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000290716000056	-
dc.citation.woscount	6	-
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